|Intel claims a 4-year lead over competitors in the race to the 20nm process node.|
In a session titled "22nm Tri-gate Transistors for Industry-Leading Low Power Capabilities" at the Intel Developer Forum (IDF) yesterday, Intel Senior Fellow Mark Bohr said that the company's FinFET process is 4 years ahead of competitors, including TSMC and the trio of GlobalFoundries, Samsung and IBM (i.e. Common Platform). In explaining Intel's technology lead during the Q&A session following his talk, Bohr went so far as to question whether any other company was yet shipping a high-k metal gate (HKMG) process in volume production - a technology which Intel began shipping in 2007.
|GlobalFoundries process roadmap targets 20nm in Q4 2012|
|Intel's 22nm Tri-Gate SoC process will offer a full set of features to support RF, |
analog and mixed-signal applications for mobile devices.
Intel is targeting production of their new Ivy Bridge processor, the successor to Sandy Bridge, in the 22nm Tri-Gate process in Q4 2011. Public availability is targeted for the first half of 2012. Intel is developing a large number of process options for 22nm Tri-Gate SoC, including higher voltage thick-gate transistors, RLC passive components for analog and RF applications, and embedded one-time programmable (OTP) memory.